Infineon OptiMOS™ 3 BSC090N03MSGXT, N-Channel Power MOSFET, 30 V Vdss, 9 mOhm Rds(on) @ 30 A, 10 V, 48 A continuous drain (Tc), PG-TDSON-8-5 package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ 3 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Ta), 48A (Tc) |
| Power dissipation | 2.5W (Ta), 32W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 9mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 24 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1900 pF @ 15 V |
The Infineon BSC090N03MSGXT is an N-channel power MOSFET from the OptiMOS™ 3 family, rated for 30 V drain-to-source voltage and 9 mOhm typical on-resistance at 30 A with a 10 V gate drive.
The 2.5 W at ambient (Ta) vs 32 W at case (Tc) derating tells you the board copper and via array under the pad are what carry the heat — plan for a thermal via cluster under the source pad if you intend to run near the 48 A continuous drain rating at elevated ambient.
The Rds(on) is 9 mOhm maximum at 30 A drain current with a 10 V gate drive. At 4.5 V gate drive the on-resistance is higher — the datasheet curve should be checked for the exact value at your operating point.
Within the OptiMOS™ 3 family, parts in the same PG-TDSON-8-5 footprint with similar 30 V Vdss ratings exist, but the exact Rds(on) and gate charge trade-offs differ. No official second-source alternate is listed in the record. For a pin-compatible drop-in, review the Infineon OptiMOS™ 3 selection guide for devices sharing the PG-TDSON-8-5 package and 30 V rating.