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Infineon Technologies BSC090N03MSGXT
Infineon Technologies

Infineon BSC090N03MSGXT N-Channel MOSFET, 30 V, 9 mOhm

MPNBSC090N03MSGXT
End of Life

Infineon OptiMOS™ 3 BSC090N03MSGXT, N-Channel Power MOSFET, 30 V Vdss, 9 mOhm Rds(on) @ 30 A, 10 V, 48 A continuous drain (Tc), PG-TDSON-8-5 package, -55°C to 150°C junction temperature.

$0.24Ref. price · indicative, final on quote
BSC090N03MSGXT datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSC090N03MSGXT Technical Specifications
ParameterValue
SeriesOptiMOS™ 3
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12A (Ta), 48A (Tc)
Power dissipation2.5W (Ta), 32W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs9mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1900 pF @ 15 V

Product details

30 V, 9 mOhm N-channel — the switching MOSFET for 12 V and 24 V rails

The Infineon BSC090N03MSGXT is an N-channel power MOSFET from the OptiMOS™ 3 family, rated for 30 V drain-to-source voltage and 9 mOhm typical on-resistance at 30 A with a 10 V gate drive. It handles 48 A continuous drain current at the case (Tc) and 12 A at ambient (Ta), making it a fit for point-of-load converters, DC-DC bricks, and low-voltage motor drives that need low conduction loss in a compact surface-mount package.

Package and thermal path

Housed in an 8-PowerTDFN (PG-TDSON-8-5), this is a surface-mount package with an exposed pad for thermal dissipation. The 2.5 W at ambient (Ta) vs 32 W at case (Tc) derating tells you the board copper and via array under the pad are what carry the heat — plan for a thermal via cluster under the source pad if you intend to run near the 48 A continuous drain rating at elevated ambient.

Lifecycle and sourcing

Listed as Active in production — no end-of-life notice, no last-time-buy pressure.

Frequently asked questions

What is the Rds(on) of BSC090N03MSGXT?

The Rds(on) is 9 mOhm maximum at 30 A drain current with a 10 V gate drive. At 4.5 V gate drive the on-resistance is higher — the datasheet curve should be checked for the exact value at your operating point.

What is the closest pin-compatible alternative to BSC090N03MSGXT in this component family?

Within the OptiMOS™ 3 family, parts in the same PG-TDSON-8-5 footprint with similar 30 V Vdss ratings exist, but the exact Rds(on) and gate charge trade-offs differ. No official second-source alternate is listed in the record. For a pin-compatible drop-in, review the Infineon OptiMOS™ 3 selection guide for devices sharing the PG-TDSON-8-5 package and 30 V rating.