OptiMOS 30 V N-channel — what the ratings mean for the board
The Infineon BSC090N03LSGATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS™ family, rated for 30 V drain-source breakdown and packaged in a PG-TDSON-8-5 (8-PowerTDFN) surface-mount footprint. It targets low-voltage DC-DC converters, load switches, and battery protection circuits where conduction loss and board area are the primary constraints. The headline on-resistance is 9 mOhm maximum at 10 V gate drive with 30 A drain current — that is the figure that sets the I²R loss in a synchronous rectifier or high-current OR-ing diode replacement. At 48 A continuous drain current (Tc), the silicon itself can carry the load, but the 2.5 W at ambient vs 32 W at case tells you the board copper and any heatsink define the real thermal limit. Gate charge of 18 nC at 10 V is specified. The ±20 V maximum gate-source rating and 4.5 V, 10 V drive voltage are listed. Junction temperature range of -55°C to 150°C covers automotive under-hood and industrial motor-drive environments where the PCB sees sustained heat soak. Input capacitance of 1500 pF at 15 V Vds is moderate — the switching node capacitance is not a dominant loss term at these frequencies.
Sourcing and lifecycle
The BSC090N03LSGATMA1 carries an active lifecycle status. ROHS3 compliant.