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Infineon Technologies BSC0902NSATMA1
Infineon Technologies

Infineon BSC0902NSATMA1 N-Channel MOSFET, 30 V, 2.6 mOhm

MPNBSC0902NSATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 30 V drain-to-source, 2.6 mOhm max Rds(on) at 10 V, 24 A continuous drain at Ta, 100 A at Tc, PG-TDSON-8-6 package, -55 to 150 °C junction temperature.

$1.16Ref. price · indicative, final on quote
BSC0902NSATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC0902NSATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C24A (Ta), 100A (Tc)
Power dissipation2.5W (Ta), 48W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs2.6mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1700 pF @ 15 V

Product details

30 V N-channel in a PG-TDSON-8-6 — what the specs mean for your design

The Infineon BSC0902NSATMA1 is a 30 V N-channel MOSFET from the OptiMOS series, housed in a PG-TDSON-8-6 surface-mount package. On-resistance is 2.6 mOhm at 10 V gate drive and 30 A drain current.

Gate drive and switching — what 26 nC Qg means

Total gate charge is 26 nC at 10 V. Input capacitance is 1700 pF at 15 V Vds.

5 V gate drive compatibility

Drive voltage is specified for 4.5 V and 10 V. At 4.5 V the on-resistance is higher than 2.6 mOhm at 10 V.

Package and mounting

The PG-TDSON-8-6 is a PowerTDFN package with an exposed drain pad. Power dissipation is 48 W at case temperature and 2.5 W at ambient.

Lifecycle and sourcing

Product status is Active with ROHS3 compliance. No last-time-buy or obsolescence notice is in effect.

Frequently asked questions

What is the Rds(on) of BSC0902NSATMA1?

The maximum on-resistance is 2.6 mOhm at 30 A drain current with a 10 V gate drive. At 4.5 V drive the Rds(on) is higher but the part is rated for that condition.

Is BSC0902NSATMA1 compatible with 5V gate drive?

Yes. The drive voltage range includes 4.5 V (minimum for rated Rds(on)), so a 5 V logic rail or 5 V gate driver can fully enhance the channel. Expect higher on-resistance than at 10 V.