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BSC0901NSIATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS N-Channel MOSFET, 30 V Vdss, 28 A (Ta) / 100 A (Tc) continuous drain, 2 mOhm max Rds(on) at 10 V, PG-TDSON-8-6 package, -55°C to 150°C junction temperature.

Infineon Technologies BSC0901NSIATMA1
[IN STOCK] In Stock: 470 pcs
$0.78/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

BSC0901NSIATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C28A (Ta), 100A (Tc)
Power dissipation2.5W (Ta), 69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs2mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 15 V
Input capacitance (Ciss) (Max) @ vds2600 pF @ 15 V

Technical details

Rds(on) and gate drive — sizing the gate driver and thermal budget

The drive voltage spec (4.5 V min, 10 V for rated Rds(on)) means a standard 10 V gate-drive rail hits the minimum on-resistance.

Package and mounting — PG-TDSON-8-6 footprint notes

The 8-pin body is compact, but the pad area dominates the footprint — check the recommended land pattern in the datasheet before layout release.

For a BOM freeze or new-design qualification, this part is a clean entry — no near-term supply risk from the manufacturer side. The OptiMOS series is a mature Infineon portfolio, so datasheet and application-note support are well established.

BSC0901NSIATMA1
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