P-channel 30 V OptiMOS in a PG-TDSON-8-5
The Infineon BSC084P03NS3GATMA1 is a P-channel enhancement-mode MOSFET from the OptiMOS series, built on a trench MOSFET process. The continuous drain current is rated 14.9 A at 25°C ambient (Ta) and 78.6 A at the case (Tc), reflecting the thermal limit of the 8-PowerTDFN package versus the die capability. The 2.5 W (Ta) / 69 W (Tc) power dissipation split tells the buyer that a heatsink or board copper area is needed to approach the higher current rating.
Gate charge and drive voltage
Total gate charge Qg is 58 nC at Vgs = 10 V. At a 100 kHz switching frequency, the average gate-drive current is 5.8 mA — well within the capability of a standard MOSFET driver, but the 4785 pF input capacitance at 15 V Vds means the driver must source a peak current high enough to charge Ciss within the desired rise time. The drive voltage range for achieving the rated Rds(on) is 6 V to 10 V, with the 8.4 mOhm figure quoted at 10 V. At 6 V the on-resistance will be higher — the datasheet curve (not reproduced here) shows the typical increase. For designs running from a 5 V rail, the 3.1 V max threshold at 105 µA leaves little gate-drive margin; a 10 V supply is preferred for full performance.
Temperature range and package
Junction temperature range is -55°C to 150°C, covering automotive under-hood and industrial environments without derating. The PG-TDSON-8-5 package (8-PowerTDFN) is a surface-mount package with an exposed drain pad on the bottom — the PCB copper area under the pad sets the thermal resistance to ambient. ROHS3 compliant per the lifecycle record, with no exemptions that would block EU or Asian production lines.
Sourcing and lifecycle
No official second-source or pin-compatible alternate is listed in the Infineon portfolio for this exact PG-TDSON-8-5 footprint. The IPD50R950CEAUMA1 is a CoolMOS N-channel part in a different package and voltage class — not a functional replacement for a P-channel 30 V load switch.