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Infineon Technologies BSC080N03MSGATMA1

Infineon BSC080N03MSGATMA1 OptiMOS N-Ch MOSFET, 30V 53A

MPNBSC080N03MSGATMA1
End of Life

Infineon OptiMOS series, BSC080N03MSGATMA1, N-Channel MOSFET, 30 V Vdss, 13 A (Ta) / 53 A (Tc) continuous drain, 8 mOhm Rds(on) at 30 A, 10 V gate drive, 8-PowerTDFN (PG-TDSON-8-5) package, -55°C to 150°C junction temperature.

$0.99Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC080N03MSGATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C13A (Ta), 53A (Tc)
Power dissipation2.5W (Ta), 35W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2100 pF @ 15 V

Product details

Gate drive and switching behaviour

The gate is rated ±20 V maximum, and the drive voltage for the rated Rds(on) is 4.5 V or 10 V. Total gate charge at 10 V is 27 nC, which means the gate-driver doesn't need to source a lot of current. Input capacitance at 15 V drain-source is 2100 pF, so the switching edges will be clean with a modest gate resistor.

Temperature range and environment

Junction temperature spans -55 °C to 150 °C, which covers industrial and automotive under-hood environments. The threshold voltage is 2 V maximum at 250 µA drain current, so it's fully off below that gate voltage — useful for a low-side switch where the gate is pulled to ground through a pulldown resistor.

Lifecycle and sourcing

The BSC080N03MSGATMA1 is listed as Active with ROHS3 compliance. No end-of-life notice or last-time-buy schedule is in the record.

Frequently asked questions

What is the Rds(on) of BSC080N03MSGATMA1?

The maximum on-resistance is 8 mOhm at a drain current of 30 A with a 10 V gate drive.

What package is BSC080N03MSGATMA1?

It comes in an 8-PowerTDFN surface-mount package, specifically the PG-TDSON-8-5 supplier device package.

What is the closest pin-compatible alternative to BSC080N03MSGATMA1 in this component family?

The OptiMOS series includes several 30 V N-channel devices in the same PG-TDSON-8-5 footprint with different Rds(on) and current ratings. No specific pin-compatible alternate is listed in the record; check the Infineon OptiMOS selector guide for a drop-in with the same pad layout.