Infineon OptiMOS series BSC077N12NS3GATMA1, N-Channel MOSFET, 120V Vdss, 7.7mOhm Rds(on) @ 50A/10V, 98A continuous drain @ Tc, PG-TDSON-8-1 surface-mount package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 120 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 13.4A (Ta), 98A (Tc) |
| Power dissipation | 139W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 110µA |
| Rds on (Max) @ id, vgs | 7.7mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 88 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5700 pF @ 60 V |
The BSC077N12NS3GATMA1: N-channel MOSFET from the OptiMOS series, 120 V drain-source voltage, 7.7 mOhm on-resistance at 50 A and 10 V gate drive.
Power dissipation is 139 W at the case — that assumes a good thermal interface to a heatsink or PCB copper plane.
Yes — 10 V is the specified drive voltage for achieving the minimum Rds(on) of 7.7 mOhm. The gate-source maximum rating is ±20 V, so 10 V is well within the safe operating area.
Maximum on-resistance is 7.7 mOhm at 50 A drain current with 10 V gate-source voltage.
Maximum gate charge is 88 nC at 10 V gate-source voltage.
Yes — this part is ROHS3 compliant, which covers lead-free and RoHS requirements.