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Infineon Technologies BSC070N10NS3GATMA1

BSC070N10NS3GATMA1 - Infineon Technologies

MPNBSC070N10NS3GATMA1
End of Life

MOSFET N-CH 100V 90A TDSON-8

$1.7Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC070N10NS3GATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C90A (Tc)
Power dissipation114W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.5V @ 75µA
Rds on (Max) @ id, vgs7mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4000 pF @ 50 V