Switching performance and gate drive requirements
The drive voltage range for achieving the rated Rds(on) is 6 V to 10 V, with the 10 V level delivering the minimum on-resistance. Input capacitance is 1500 pF at 30 V drain-source, which influences the gate-driver sizing and switching transition times.
It is ROHS3 compliant, which simplifies procurement for designs requiring lead-free assembly. The series is OptiMOS, Infineon's established trench-technology platform for low-voltage power MOSFETs.
