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Infineon Technologies BSC066N06NSATMA1
Infineon Technologies

Infineon BSC066N06NSATMA1 N-Channel MOSFET, 60V 64A

MPNBSC066N06NSATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 60 V Vdss, 64 A Id, 6.6 mOhm Rds(on) at 10 V, PG-TDSON-8-6 package, surface mount, -55°C to 150°C junction temperature.

$1.42Ref. price · indicative, final on quote
BSC066N06NSATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC066N06NSATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C64A (Tc)
Power dissipation2.5W (Ta), 46W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.3V @ 20µA
Rds on (Max) @ id, vgs6.6mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 30 V

Product details

Switching performance and gate drive requirements

The BSC066N06NSATMA1: The gate charge is 21 nC at 10 V, a moderate figure that allows hard-switched topologies up to a few hundred kHz without excessive driver losses. The drive voltage range for achieving the rated Rds(on) is 6 V to 10 V, with the 10 V level delivering the minimum on-resistance. Input capacitance is 1500 pF at 30 V drain-source, which influences the gate-driver sizing and switching transition times.

Lifecycle and compliance

It is ROHS3 compliant, which simplifies procurement for designs requiring lead-free assembly. The series is OptiMOS, Infineon's established trench-technology platform for low-voltage power MOSFETs.

Frequently asked questions

What is the Rds(on) of BSC066N06NSATMA1?

Maximum on-resistance is 6.6 mOhm at 50 A drain current with a 10 V gate drive.

Is BSC066N06NSATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.

What is the closest functional equivalent to BSC066N06NSATMA1?

The IPD50R950CEAUMA1 is a different class of part—a 500 V CoolMOS CE device with 950 mOhm Rds(on) and 4.3 A current rating—not a functional equivalent. No pin-compatible second source is listed on this record.