Infineon OptiMOS series, BSC060P03NS3EGATMA1, P-Channel MOSFET, 30V Vdss, 100A continuous drain at Tc, 6mOhm Rds(on) at 10V, 81nC gate charge, 8-PowerTDFN package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 17.7A (Ta), 100A (Tc) |
| Power dissipation | 2.5W (Ta), 83W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.1V @ 150µA |
| Rds on (Max) @ id, vgs | 6mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 81 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6020 pF @ 15 V |
The 8-PowerTDFN package is a surface-mount, leadless design with an exposed pad. Power dissipation is rated at 2.5 W at ambient and 83 W at the case. The supplier device package code PG-TDSON-8-1 matches Infineon's standard footprint; verify the land pattern in the datasheet before layout.
For new designs or production BOMs, the active status means no immediate supply risk, but always confirm current availability at quote time through independent distribution.
Maximum on-resistance is 6 mOhm at a drain current of 50 A with 10 V gate-source drive.
Yes, it is ROHS3 Compliant.