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Infineon Technologies BSC052N03LSATMA1

BSC052N03LSATMA1 Infineon OptiMOS N-Ch 30V MOSFET, 5.2mOhm

MPNBSC052N03LSATMA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, 30 V drain-source, 5.2 mOhm Rds(on) at 10 V, 57 A continuous drain at case temperature, PG-TDSON-8-6 package, -55 to 150 °C junction temperature.

$1.19Ref. price · indicative, final on quote
Infineon Technologies BSC052N03LSATMA1 datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC052N03LSATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C17A (Ta), 57A (Tc)
Power dissipation2.5W (Ta), 28W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs5.2mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds770 pF @ 15 V

Product details

30 V, 5.2 mOhm — what this OptiMOS N-channel delivers

The Infineon BSC052N03LSATMA1 is a 30 V N-channel MOSFET from the OptiMOS series, built on a metal-oxide trench technology. Its headline on-resistance is 5.2 mOhm maximum at 10 V gate drive with 30 A drain current.

Junction temperature spans -55 to 150 °C, which covers automotive under-hood, industrial motor-drive compartments, and outdoor telecom enclosures. The 2.5 W dissipation at ambient (Ta) vs 28 W at case (Tc) tells the thermal story: this part needs a good thermal path to the board or a heatsink to use its full current capability.

Frequently asked questions

What is the Rds(on) of BSC052N03LSATMA1?

Maximum on-resistance is 5.2 mOhm at 30 A drain current with a 10 V gate drive.

Is BSC052N03LSATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.

Can BSC052N03LSATMA1 be used for high-frequency switching?

With 12 nC gate charge and 770 pF input capacitance, it is suited for moderate-frequency switching up to about 200 kHz in hard-switched topologies. For higher frequencies, a part with lower gate charge and capacitance would be a better fit.