OptiMOS N-channel for 25 V rails
The Infineon BSC050NE2LSATMA1 is an N-channel MOSFET from the OptiMOS series, built for low-voltage power switching up to 25 V drain-source. Its 5 mOhm typical on-resistance at 30 A and 10 V gate drive keeps conduction losses low in DC-DC converters, load switches, and motor-drive half-bridges. The PG-TDSON-8-5 package (8-PowerTDFN) is a compact surface-mount footprint suited to dense PCB layouts in automotive and industrial power stages.
Rds(on) and gate charge — switching loss trade-off
Maximum Rds(on) is 5 mOhm at 30 A and 10 V. Gate charge is 10.4 nC at 10 V.
Current rating and thermal headroom
Continuous drain current is rated at 39 A at 25 °C ambient (Ta) and 58 A at 25 °C case temperature (Tc). The 2.5 W maximum dissipation at Ta vs 28 W at Tc highlights how much the PCB copper and airflow matter — in a real layout, the 39 A figure is the practical design limit unless you have a heatsink or forced air. The -55 °C to 150 °C junction temperature range covers automotive under-hood and industrial environments where ambient can spike.
Gate drive and threshold
Drive voltage range for rated Rds(on) is 4.5 V to 10 V. Maximum gate threshold is 2 V at 250 µA drain current.
Package and mounting
Supplier device package is PG-TDSON-8-5. It is a surface-mount package with an exposed drain pad.
Lifecycle and compliance
ROHS3 compliant, so it meets the latest EU restriction directive. No second-source or direct replacement is listed in the Infineon portfolio; the part is the standard OptiMOS offering for this voltage and Rds(on) tier.