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Infineon Technologies BSC050NE2LSATMA1

BSC050NE2LSATMA1 Infineon OptiMOS N-Ch MOSFET, 25V 58A

MPNBSC050NE2LSATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 25V drain-source, 39A/58A continuous drain, 5mOhm Rds(on) at 30A, 10V gate drive, PG-TDSON-8-5 surface-mount package, -55°C to 150°C junction temperature.

$0.92Ref. price · indicative, final on quote
Infineon Technologies BSC050NE2LSATMA1 datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC050NE2LSATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C39A (Ta), 58A (Tc)
Power dissipation2.5W (Ta), 28W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs5mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs10.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds760 pF @ 12 V

Product details

OptiMOS N-channel for 25 V rails

The Infineon BSC050NE2LSATMA1 is an N-channel MOSFET from the OptiMOS series, built for low-voltage power switching up to 25 V drain-source. The PG-TDSON-8-5 package (8-PowerTDFN) is a compact surface-mount footprint suited to dense PCB layouts in automotive and industrial power stages.

Maximum Rds(on) is 5 mOhm at 30 A and 10 V. Gate charge is 10.4 nC at 10 V.

Current rating and thermal headroom

The 2.5 W maximum dissipation at Ta vs 28 W at Tc highlights how much the PCB copper and airflow matter — in a real layout, the 39 A figure is the practical design limit unless you have a heatsink or forced air.

Gate drive and threshold

Maximum gate threshold is 2 V at 250 µA drain current.

Supplier device package is PG-TDSON-8-5.

Frequently asked questions

What is the equivalent or replacement for BSC050NE2LSATMA1?

No direct pin-compatible replacement is listed in the Infineon portfolio. The peer IPD50R950CEAUMA1 is a 500 V CoolMOS device with 950 mOhm Rds(on) — it is not a functional substitute for this 25 V OptiMOS part. For a drop-in alternate, check the Infineon OptiMOS 25 V family with similar Rds(on) and package.