Infineon Technologies · OptiMOS™ 5 Series
Infineon OptiMOS™ 5 N-Channel MOSFET, 100 V Vdss, 5 mOhm Rds(on) at 10 V, 100 A continuous drain (case), 61 nC gate charge, 8-PowerTDFN (PG-TDSON-8-7), -55 to 175 °C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ 5 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 16A (Ta), 100A (Tc) |
| Power dissipation | 3W (Ta), 136W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.8V @ 72µA |
| Rds on (Max) @ id, vgs | 5mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 61 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4300 pF @ 50 V |
The BSC050N10NS5ATMA1: Housed in an 8-PowerTDFN (supplier package PG-TDSON-8-7), this is a surface-mount power package with an exposed drain pad on the bottom. The 3 W (Ta) / 136 W (Tc) power dissipation split tells you: at ambient, the board is the heatsink; at case-referenced, you need a thermal interface to a heatsink or chassis.
No NRND or last-time-buy notices are on record for this order code.
