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Infineon Technologies BSC050N03LSGATMA1

BSC050N03LSGATMA1 N-Channel 30V MOSFET, 5mOhm Rds(on)

MPNBSC050N03LSGATMA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, 30 V Vdss, 5 mOhm Rds(on) at 30 A, 18 A (Ta) / 80 A (Tc) continuous drain, PG-TDSON-8-5 package, -55°C to 150°C junction temperature.

$0.85Ref. price · indicative, final on quote
Infineon Technologies BSC050N03LSGATMA1 datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC050N03LSGATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C18A (Ta), 80A (Tc)
Power dissipation2.5W (Ta), 50W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs5mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2800 pF @ 15 V

Product details

What this OptiMOS N-channel does on the board

The Infineon BSC050N03LSGATMA1 is a 30 V N-channel MOSFET from the OptiMOS series, built for low-voltage power switching.

Package and mounting — PG-TDSON-8-5

The 8-PowerTDFN package (supplier device code PG-TDSON-8-5) is a surface-mount power package with an exposed drain pad. The pad needs a good solder joint to the PCB copper for thermal and electrical performance — treat it as a thermal via farm under the pad.

It is ROHS3 compliant. No direct second-source alternate is listed in the record, but the OptiMOS 30 V family has several Rds(on) tiers — if the 5 mOhm is the fit, this is the part.

Frequently asked questions

What is the Rds(on) of BSC050N03LSG?

The maximum Rds(on) is 5 mOhm at a drain current of 30 A with a 10 V gate drive. This is the headline spec for conduction loss in low-voltage switching applications.