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Infineon Technologies BSC0501NSIATMA1
Infineon Technologies

Infineon BSC0501NSIATMA1 N-Channel MOSFET, 30V, 1.9mOhm

MPNBSC0501NSIATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 30V Drain to Source Voltage, 1.9mOhm Rds(on) at 30A, 10V, 29A (Ta) / 100A (Tc) Continuous Drain, PG-TDSON-8-6 Package, -55°C to 150°C Junction Temperature.

$1.78Ref. price · indicative, final on quote
BSC0501NSIATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSC0501NSIATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C29A (Ta), 100A (Tc)
Power dissipation2.5W (Ta), 50W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureSchottky Diode (Body)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs1.9mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs33 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2200 pF @ 15 V

Product details

What this 30 V N-channel OptiMOS MOSFET delivers

The Infineon BSC0501NSIATMA1 is a 30 V N-channel MOSFET from the OptiMOS series. Its maximum on-resistance is 1.9 mOhm at 30 A and 10 V gate drive. Gate charge is 33 nC at 10 V. The integrated Schottky body diode reduces reverse-recovery charge.

Where it fits in a power stage

This is a low-voltage, high-current switch for rails up to 30 V. The junction temperature range is -55°C to 150°C. The drive voltage range is 4.5 V to 10 V. The 1.9 mOhm Rds(on) is specified at 10 V.

Frequently asked questions

What is the closest pin-compatible alternative to the BSC0501NSIATMA1?

Infineon's OptiMOS family includes several 30 V N-channel MOSFETs in the PG-TDSON-8 package. The BSC0501NSIATMA1 is distinguished by its 1.9 mOhm Rds(on) and integrated Schottky body diode. A direct pin-compatible alternative would need to match the PG-TDSON-8-6 footprint and the same gate-drive voltage range; verify the specific Rds(on) and gate charge trade-offs against your efficiency target.

Is the BSC0501NSIATMA1 compatible with standard MOSFET drivers?

Yes. The gate drive voltage range is 4.5 V to 10 V, which is compatible with standard 5 V and 10 V gate drivers. The 33 nC gate charge at 10 V is moderate for a 100 A class device, so a driver with at least 1 A peak source/sink capability is recommended for fast switching.

What is the thermal resistance of the BSC0501NSIATMA1?

The power dissipation ratings imply the thermal resistance: 2.5 W maximum at ambient temperature (Ta) and 50 W at case temperature (Tc). The junction-to-ambient thermal resistance is approximately 50°C/W, and junction-to-case is about 2.5°C/W, assuming standard PCB mounting with the exposed pad soldered to a copper plane.