BSC0500NSIATMA1

Infineon Technologies · OptiMOS™ Series

MOSFET N-CH 30V 35A/100A TDSON

Infineon Technologies BSC0500NSIATMA1
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[IN STOCK] In Stock: 8 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSC0500NSIATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C35A (Ta), 100A (Tc)
Power dissipation2.5W (Ta), 69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs1.3mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs52 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3300 pF @ 15 V
BSC0500NSIATMA1
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