Skip to main content
Log in
Infineon Technologies BSC040N10NS5SCATMA1

Infineon BSC040N10NS5SCATMA1 N-Channel MOSFET, 100 V, 140 A

MPNBSC040N10NS5SCATMA1
End of Life

Infineon OptiMOS™ 5 N-Channel MOSFET, BSC040N10NS5SCATMA1, 100 V Vdss, 140 A Id, 4 mOhm Rds(on) at 10 V, PG-WSON-8-2 package, -55°C to 175°C junction temperature.

$3.83Ref. price · indicative, final on quote
Infineon Technologies BSC040N10NS5SCATMA1 datasheet (PDF)
Packaging8-PowerWDFN
RoHSROHS3 Compliant
SeriesOptiMOS™ 5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC040N10NS5SCATMA1 specifications
ParameterValue
SeriesOptiMOS™ 5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C140A (Tc)
Power dissipation3W (Ta), 167W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerWDFN
Vgs(th) (Max) @ id3.8V @ 95µA
Rds on (Max) @ id, vgs4mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5300 pF @ 50 V

Product details

100 V, 140 A N-channel in a 8-PowerWDFN

The 72 nC total gate charge at 10 V sets the gate-drive power requirement; at a 100 kHz switching frequency the driver must supply about 7.2 mA average current just to charge and discharge the gate capacitance.

Thermal and switching headroom

Input capacitance is 5300 pF at 50 V drain-source; this capacitance must be charged and discharged each switching cycle, contributing to the driver's dynamic current demand and the switching losses in hard-switched topologies.

The OptiMOS™ 5 family includes multiple voltage and Rds(on) variants in the same PG-WSON-8-2 footprint, allowing a pin-compatible upgrade path if the current rating or on-resistance requirement changes during the design cycle.

Frequently asked questions

What is the typical application for this MOSFET?

The 100 V rating and 4 mOhm Rds(on) suit it for synchronous rectification in DC-DC converters, OR-ing circuits in redundant power supplies, motor-drive half-bridges, and battery-protection switches where the continuous current exceeds 100 A.

What is the closest functional second-source to BSC040N10NS5SCATMA1?

The IPD50R950CEAUMA1 is a CoolMOS CE N-channel MOSFET in a similar surface-mount package, but it is a 500 V / 4.3 A device with 950 mOhm Rds(on) — a completely different voltage and current class. It is not a functional replacement for the 100 V / 140 A BSC040N10NS5SCATMA1.