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Infineon Technologies BSC040N10NS5SCATMA1

Infineon BSC040N10NS5SCATMA1 N-Channel MOSFET, 100 V, 140 A

MPNBSC040N10NS5SCATMA1
End of Life

Infineon OptiMOS™ 5 N-Channel MOSFET, BSC040N10NS5SCATMA1, 100 V Vdss, 140 A Id, 4 mOhm Rds(on) at 10 V, PG-WSON-8-2 package, -55°C to 175°C junction temperature.

$3.83Ref. price · indicative, final on quote
Packaging8-PowerWDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSC040N10NS5SCATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™ 5
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C140A (Tc)
Power dissipation3W (Ta), 167W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerWDFN
Vgs(th) (Max) @ id3.8V @ 95µA
Rds on (Max) @ id, vgs4mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5300 pF @ 50 V

Product details

100 V, 140 A N-channel in a 8-PowerWDFN

The 72 nC total gate charge at 10 V sets the gate-drive power requirement; at a 100 kHz switching frequency the driver must supply about 7.2 mA average current just to charge and discharge the gate capacitance.

Thermal and switching headroom

Maximum power dissipation is 3 W with the device on a standard PCB at 25°C ambient, but rises to 167 W when the case is held at 25°C — the actual dissipation depends entirely on the thermal interface to the heatsink or PCB copper plane. Input capacitance is 5300 pF at 50 V drain-source; this capacitance must be charged and discharged each switching cycle, contributing to the driver's dynamic current demand and the switching losses in hard-switched topologies.

Package and footprint considerations

The 0.50 mm pitch pads demand careful solder-paste stencil design to avoid bridging.

Sourcing and lifecycle

The OptiMOS™ 5 family includes multiple voltage and Rds(on) variants in the same PG-WSON-8-2 footprint, allowing a pin-compatible upgrade path if the current rating or on-resistance requirement changes during the design cycle.

Frequently asked questions

What is the typical application for this MOSFET?

The 100 V rating and 4 mOhm Rds(on) suit it for synchronous rectification in DC-DC converters, OR-ing circuits in redundant power supplies, motor-drive half-bridges, and battery-protection switches where the continuous current exceeds 100 A.

What is the closest functional second-source to BSC040N10NS5SCATMA1?

The IPD50R950CEAUMA1 is a CoolMOS CE N-channel MOSFET in a similar surface-mount package, but it is a 500 V / 4.3 A device with 950 mOhm Rds(on) — a completely different voltage and current class. It is not a functional replacement for the 100 V / 140 A BSC040N10NS5SCATMA1.