100 V, 100 A, 4 mOhm — what this OptiMOS delivers
The BSC040N10NS5ATMA1: N-channel MOSFET, 100 V drain-to-source, 100 A continuous drain at case temperature. 4 mOhm on-resistance at 10 V gate drive; 72 nC gate charge at 10 V.
Where it fits — motor drives, battery systems, and 48 V buses
Junction temperature range -55°C to 150°C. 8-PowerTDFN (PG-TDSON-8-7) surface-mount package with exposed drain pad.
Gate drive voltage — mind the threshold
Maximum gate threshold 3.8 V at 95 µA. Drive voltage for minimum on-resistance is 10 V. ±20 V maximum gate rating.
Sourcing and lifecycle — active, no LTB risk
ROHS3 compliant per the Infineon declaration. For a production BOM line, this part carries no last-time-buy risk for the foreseeable design life.
