60 V, 3.9 mOhm — the conduction-loss floor
BSC039N06NSATMA1 is an N-Channel OptiMOS MOSFET with 60 V Vdss and 3.9 mOhm Rds(on) at 50 A, 10 V.
19 A ambient, 100 A case — which number matters
The continuous drain rating splits into 19 A at 25°C ambient (Ta) and 100 A at 25°C case (Tc). The 19 A figure is the practical limit for a free-air board with no heatsink; the 100 A number assumes the PG-TDSON-8-6 package's exposed pad is soldered to a copper plane that pulls heat into the PCB. The 2.5 W (Ta) vs 69 W (Tc) power dissipation spread tells the same story — the package thermal path is the bottleneck, not the silicon.
Gate drive budget at 10 V
Gate charge Qg is 27 nC max at 10 V. At a 100 kHz switching frequency the gate-drive power is roughly Qg × Vgs × fsw = 27 nC × 10 V × 100 kHz = 27 mW, well within a standard driver's capability. The drive voltage range is 6 V to 10 V for rated Rds(on); the 10 V rail delivers the full 3.9 mOhm, while 6 V is the minimum for the specified on-resistance.