Infineon OptiMOS™ BSC037N08NS5ATMA1, N-Channel MOSFET, 80V Vdss, 100A Id, 3.7mOhm Rds(on) @ 50A, 10V, 58nC Qg, 8-PowerTDFN (PG-TDSON-8-7), -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 2.5W (Ta), 114W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.8V @ 72µA |
| Rds on (Max) @ id, vgs | 3.7mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 58 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4200 pF @ 40 V |
The 8-PowerTDFN (PG-TDSON-8-7) is a surface-mount package with an exposed pad that must be soldered to a copper plane for the 114 W maximum power dissipation at case temperature.
ROHS3 compliant — no exemptions to track for EU or global markets.
Yes, it is ROHS3 compliant — no exemptions to manage.
This part is sourced to order; availability and pricing are confirmed at quote time.