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Infineon Technologies BSC036NE7NS3GATMA1
Infineon Technologies

Infineon BSC036NE7NS3GATMA1 N-Channel MOSFET, 75 V, 100 A

MPNBSC036NE7NS3GATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 75 V Vdss, 100 A Id, 3.6 mOhm Rds(on) at 10 V, PG-TDSON-8-7 package, -55 to 150 °C operating range.

$3.21Ref. price · indicative, final on quote
BSC036NE7NS3GATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC036NE7NS3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation2.5W (Ta), 156W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.8V @ 110µA
Rds on (Max) @ id, vgs3.6mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs63.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4400 pF @ 37.5 V

Product details

Package and mounting

The Infineon BSC036NE7NS3GATMA1 is an N-channel MOSFET from the OptiMOS series, rated for 75 V drain-to-source and 100 A continuous drain current at case temperature. The 3.6 mOhm on-resistance at 10 V gate drive keeps conduction losses low in high-current paths.

Gate charge and switching — what 63.4 nC buys

Total gate charge is 63.4 nC at 10 V. Input capacitance is 4400 pF at 37.5 V drain-source.

Temperature range — where it runs

Rated for -55 to 150 °C junction temperature. The 3.8 V threshold at 110 µA means it turns on hard with a 10 V gate.

Lifecycle and sourcing

Infineon lists the BSC036NE7NS3GATMA1 as Active — no last-time-buy or obsolescence notice on this one. It is ROHS3 compliant. No official second-source is listed, so if you need dual sourcing for production, qualify a second vendor's 75 V, 3.6 mOhm N-channel in the same footprint.

Frequently asked questions

What is the Rds(on) of BSC036NE7NS3GATMA1?

Maximum on-resistance is 3.6 mOhm at 50 A drain current with 10 V gate drive.

What is the equivalent part for BSC036NE7NS3GATMA1?

No official cross-reference is listed. The IPD50R950CEAUMA1 is a different class — 500 V, 950 mOhm, CoolMOS CE — not a functional equivalent for a 75 V, 3.6 mOhm design. For a second source, look for another 75 V, 3.6 mOhm N-channel in the same PG-TDSON-8-7 footprint.