Infineon OptiMOS N-Channel MOSFET, 75 V Vdss, 100 A Id, 3.6 mOhm Rds(on) at 10 V, PG-TDSON-8-7 package, -55 to 150 °C operating range.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 75 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 2.5W (Ta), 156W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.8V @ 110µA |
| Rds on (Max) @ id, vgs | 3.6mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 63.4 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4400 pF @ 37.5 V |
Total gate charge is 63.4 nC at 10 V. Input capacitance is 4400 pF at 37.5 V drain-source.
Rated for -55 to 150 °C junction temperature. The 3.8 V threshold at 110 µA means it turns on hard with a 10 V gate.
It is ROHS3 compliant. No official second-source is listed, so if you need dual sourcing for production, qualify a second vendor's 75 V, 3.6 mOhm N-channel in the same footprint.
Maximum on-resistance is 3.6 mOhm at 50 A drain current with 10 V gate drive.
No official cross-reference is listed. The IPD50R950CEAUMA1 is a different class — 500 V, 950 mOhm, CoolMOS CE — not a functional equivalent for a 75 V, 3.6 mOhm design. For a second source, look for another 75 V, 3.6 mOhm N-channel in the same PG-TDSON-8-7 footprint.