Infineon OptiMOS™ BSC035N10NS5ATMA1, N-Channel MOSFET, 100V Vdss, 100A Id, 3.5mOhm Rds(on) at 10V, PG-TDSON-8-7 package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 2.5W (Ta), 156W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.8V @ 115µA |
| Rds on (Max) @ id, vgs | 3.5mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 87 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6500 pF @ 50 V |
Gate charge is 87 nC at 10 V. Input capacitance is 6500 pF at 50 V drain bias.
The BSC035N10NS5ATMA1 carries an active lifecycle status and is ROHS3 compliant. Infineon lists it as a current-production part.
No. The BSC035N10NS5ATMA1 carries an active lifecycle status with no end-of-life notice published. It remains a current-production part in Infineon's OptiMOS™ 5 portfolio.
Yes, but it is overkill. The 100 V drain-source rating gives huge headroom on a 12 V rail, but the 3.5 mOhm Rds(on) is higher than what a 30 V FET would offer at the same die size. It will work — just not the most cost-effective choice for a 12 V-only design.
Yes. The Rds(on) is specified at 10 V gate drive, and the device is also characterised at 6 V. The gate threshold is 3.8 V maximum at 115 µA drain current, so a standard 10 V or 12 V gate drive from a PWM controller or gate-driver IC will fully enhance the channel.