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Infineon Technologies BSC035N04LSGATMA1

Infineon BSC035N04LSGATMA1 OptiMOS N-Ch MOSFET, 40 V

MPNBSC035N04LSGATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 40 V drain-source, 3.5 mOhm max Rds(on) at 10 V, 100 A continuous drain (Tc), PG-TDSON-8-1 package, -55 to 150 °C junction temperature.

$1.49Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC035N04LSGATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C21A (Ta), 100A (Tc)
Power dissipation2.5W (Ta), 69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 36µA
Rds on (Max) @ id, vgs3.5mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs64 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5100 pF @ 20 V

Product details

What this 40 V OptiMOS N-channel brings to a power stage

The Infineon BSC035N04LSGATMA1 is a 40 V N-channel MOSFET from the OptiMOS family.

The input capacitance of 5100 pF at 20 V drain-source is moderate for most hard-switching converters.

Frequently asked questions

Is BSC035N04LSGATMA1 RoHS compliant?

Yes, it is ROHS3 compliant, meeting the current EU restriction of hazardous substances directive.