Infineon OptiMOS™ 5 BSC034N10LS5ATMA1, N-Channel MOSFET, 100V Vdss, 19A (Ta) / 100A (Tc), 3.4mOhm Rds(on) at 50A, 10V, 46nC Qg, 8-PowerTDFN (PG-TDSON-8-7), -55 to 150°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ 5 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 19A (Ta), 100A (Tc) |
| Power dissipation | 2.5W (Ta), 156W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.3V @ 115µA |
| Rds on (Max) @ id, vgs | 3.4mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 46 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 6500 pF @ 50 V |
The junction temperature range of -55 to 150 °C covers automotive under-hood, industrial motor drives in non-conditioned cabinets, and outdoor telecom shelters. The 150 °C maximum junction is typical for power MOSFETs used in high-ambient environments where derating the current is expected above 100 °C case temperature.
ROHS3 compliant. No NRND or LTB notice is on record.
The maximum Rds(on) is 3.4 mOhm at 50 A drain current with 10 V gate drive.
Yes, it is ROHS3 compliant.