40 V, 3.2 mOhm — where the conduction loss lands
BSC032N04LSATMA1 N-channel MOSFET, 40 V Vdss, 3.2 mOhm Rds(on) at 50 A, 10 V.
Current rating split — board vs heatsink
Continuous drain current is rated 21 A at 25 °C ambient (Ta) and 98 A at 25 °C case (Tc). The 21 A figure is the practical limit for a bare-board layout with no forced airflow; the 98 A assumes a heatsink on the exposed pad. If your BOM runs the FET above 21 A in a cramped enclosure, plan for a thermal pad or a heatsink interface.
Gate drive and switching speed
Total gate charge is 25 nC at 10 V, drive voltage range 4.5 V to 10 V. Input capacitance is 1800 pF at 20 V.
Package and thermal path
Housed in the PG-TDSON-8-6 (8-PowerTDFN) surface-mount package, the exposed pad is the drain terminal and the primary thermal path. Power dissipation is rated 2.5 W at Ta and 52 W at Tc — the Tc figure assumes the pad is soldered to a copper plane that sinks heat into the board.