OptiMOS 80 V N-channel for high-efficiency power switching
The BSC030N08NS5ATMA1: Gate charge of 76 nC at 10 V and input capacitance of 5600 pF at 40 V Vds define the switching-speed budget — the gate driver must supply that charge per cycle, so the switching frequency and driver strength need to be matched to avoid excessive cross-conduction or slow edges. The junction temperature range of -55 to 150 °C suits industrial motor drives, automotive under-hood, and telecom rectifiers. The 2.5 W (Ta) / 139 W (Tc) power dissipation limits require a well-designed thermal path.
Gate drive and switching considerations
The device specifies drive voltage for minimum Rds(on) at 10 V, with a threshold of 3.8 V maximum at 95 µA. A 6 V drive reduces Rds(on) slightly but not to the full 3 mOhm — 10 V is the target for rated conduction. The ±20 V Vgs max means the gate must be clamped in systems where the gate-drive supply can overshoot, particularly during startup or fault events. Input capacitance of 5600 pF at 40 V Vds means the gate driver sees a moderate capacitive load. The 76 nC gate charge at 10 V gives the total energy per cycle.
Lifecycle and sourcing
The BSC030N08NS5ATMA1 carries an Active lifecycle status from Infineon, with ROHS3 compliance. No end-of-life notice or last-time-buy window is in effect, so the part is suitable for new designs and production ramps without immediate obsolescence risk.