Infineon OptiMOS™ BSC030N03MSGATMA1, N-Channel MOSFET, 30 V drain-source, 3 mOhm Rds(on) at 10 V, 100 A continuous drain, PG-TDSON-8-1 package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 21A (Ta), 100A (Tc) |
| Power dissipation | 2.5W (Ta), 69W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 3mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 73 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5700 pF @ 15 V |
Gate charge is 73 nC at 10 V, with an input capacitance of 5700 pF at 15 V drain-source.
The part comes in a PG-TDSON-8-1 package — an 8-pin PowerTDFN with a large exposed drain pad. Surface-mount only. The gate threshold is 2 V maximum at 250 µA.
The part is available through independent distribution; pricing and availability are confirmed at quote time against an RFQ.
Maximum on-resistance is 3 mOhm at a gate drive of 10 V and a drain current of 30 A.
Maximum gate charge is 73 nC at a 10 V gate drive.
The 73 nC gate charge and 5700 pF input capacitance suit switching frequencies in the 100–300 kHz range. For MHz-range converters, a part with lower Qg and Ciss would be a better fit.