Gate charge and switching speed
The part comes in a PG-TDSON-8-1 package — an 8-pin PowerTDFN with a large exposed drain pad. Surface-mount only. The gate threshold is 2 V maximum at 250 µA.
BSC030N03MSGATMA1
Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS™ BSC030N03MSGATMA1, N-Channel MOSFET, 30 V drain-source, 3 mOhm Rds(on) at 10 V, 100 A continuous drain, PG-TDSON-8-1 package, -55°C to 150°C junction temperature.
[IN STOCK] In Stock: 5 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 21A (Ta), 100A (Tc) |
| Power dissipation | 2.5W (Ta), 69W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 3mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 73 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5700 pF @ 15 V |
Technical details
BSC030N03MSGATMA1
[ALLOC] verified