OptiMOS™ 25 V N-channel — what the ratings mean
The Infineon BSC029N025SG is a 25 V N-channel MOSFET from the OptiMOS™ family, built for low-voltage, high-current switching. Packaged in a PG-TDSON-8-1 (8-PowerTDFN) surface-mount case, it delivers a maximum continuous drain current of 100 A at the case (Tc) and 24 A at ambient (Ta). The headline on-resistance is 2.9 mOhm maximum at 50 A with a 10 V gate drive — that figure sets the conduction loss per amp and determines whether a heatsink is needed for the load profile.
Gate drive and switching loss budget
Gate charge (Qg) is 41 nC at 5 V, and the input capacitance (Ciss) is 5090 pF at 15 V drain-source.
Thermal limits and derating
Junction temperature range is -55°C to 150°C (TJ). The maximum power dissipation is 2.8 W at ambient (Ta) and 78 W at the case (Tc).
Lifecycle and compliance
The BSC029N025SG is listed as Active with ROHS3 compliance. The ROHS3 status covers the full substance restriction set, which simplifies compliance for EU-market and medical equipment BOMs.