At 50 A the dissipation in the FET is about 7 W at 25 °C junction; the package is rated for 83 W at the case, so the thermal limit is set by the board copper and airflow, not the silicon. The gate charge is 49 nC at 10 V. The input capacitance is 3375 pF at 30 V Vds, which sets the switching loss slope on the Miller plateau.
Temperature range and field environment
That is the full automotive and industrial envelope — under-hood electronics, outdoor telecom cabinets, motor drives in factory-floor enclosures. The 150 °C ceiling means the Rds(on) derating curve matters more than the room-temperature number; at 125 °C junction the on-resistance roughly doubles from the 25 °C value, so the thermal design should budget for about 5.6 mOhm at the hot end.
Package and mounting — not a field-swap part
The package is an 8-PowerTDFN, supplier code PG-TDSON-8-7. The mounting type is surface mount, and the gate threshold is 3.3 V max at 50 µA, so a 5 V logic gate drive will turn it on hard enough to hit the rated Rds(on) with 6 V or 10 V drive.
It is ROHS3 compliant, and the series is OptiMOS, Infineon's established low-voltage power MOSFET family.