The Infineon BSC028N06NSSCATMA1 is an OptiMOS N-channel power MOSFET rated for 60 V drain-to-source and 100 A continuous drain current at case temperature 25 °C. At 50 A the dissipation in the FET is about 7 W at 25 °C junction; the package is rated for 83 W at the case, so the thermal limit is set by the board copper and airflow, not the silicon. The gate charge is 49 nC at 10 V. For a 100 kHz switching frequency the average gate-drive current works out to about 4.9 mA — well within a standard driver's capability, but the peak current needed to switch the gate in tens of nanoseconds is what sizes the driver output stage. The input capacitance is 3375 pF at 30 V Vds, which sets the switching loss slope on the Miller plateau.
Temperature range and field environment
The junction temperature range is -55 °C to 150 °C. That is the full automotive and industrial envelope — under-hood electronics, outdoor telecom cabinets, motor drives in factory-floor enclosures. The 150 °C ceiling means the Rds(on) derating curve matters more than the room-temperature number; at 125 °C junction the on-resistance roughly doubles from the 25 °C value, so the thermal design should budget for about 5.6 mOhm at the hot end.
Package and mounting — not a field-swap part
The package is an 8-PowerTDFN, supplier code PG-TDSON-8-7. This is not a part you swap on site with a soldering iron — the exposed pad needs a hot-air station or reflow profile. The mounting type is surface mount, and the gate threshold is 3.3 V max at 50 µA, so a 5 V logic gate drive will turn it on hard enough to hit the rated Rds(on) with 6 V or 10 V drive.
Lifecycle and compliance
It is ROHS3 compliant, and the series is OptiMOS, Infineon's established low-voltage power MOSFET family.