Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS N-Channel MOSFET, 60 V Vdss, 100 A continuous drain, 2.7 mOhm max Rds(on) at 10 V, PG-TDSON-8-7 surface-mount package, -55 to 150 °C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 83W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.3V @ 49µA |
| Rds on (Max) @ id, vgs | 2.7mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 4400 pF @ 30 V |
The BSC027N06LS5ATMA1: Total gate charge is 30 nC at 4.5 V, with the drive voltage range specified from 4.5 V to 10 V for achieving the rated Rds(on).
Maximum power dissipation is 83 W at the case, and the junction temperature range is -55 °C to 150 °C.
