40 V, 100 A N-channel — what the ratings mean for the power stage
The Infineon BSC027N04LSGATMA1 is an OptiMOS N-channel MOSFET rated for 40 V drain-source voltage and a continuous drain current of 100 A at the case temperature, with a maximum on-resistance of 2.7 mOhm at 50 A and 10 V gate drive. The 83 W package limit at Tc can handle the dissipation with adequate heatsinking. The 24 A rating at ambient temperature (Ta) is the board-limited, no-heatsink ceiling. Gate charge is 85 nC at 10 V. A gate driver capable of sourcing and sinking a few amps will keep switching losses manageable. If the design drives the gate at 4.5 V instead of 10 V, expect the on-resistance to rise above the 2.7 mOhm minimum.
Package and mounting — PG-TDSON-8-1
The part comes in an 8-PowerTDFN package, supplier device code PG-TDSON-8-1, which is a surface-mount, dual-side-cooled package. The exposed drain pad on the bottom requires a thermal via pattern on the PCB to transfer heat to the ground plane. The 6800 pF input capacitance at 20 V Vds means the gate driver sees a moderate capacitive load — keep the gate loop short to avoid ringing.
Lifecycle and sourcing
The BSC027N04LSGATMA1 carries an active lifecycle status with ROHS3 compliance.