BSC026N08NS5ATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS N-Channel MOSFET, BSC026N08NS5ATMA1, 80 V Vdss, 2.6 mOhm Rds(on) @ 50 A, 10 V, 100 A continuous drain, PG-TDSON-8-6 package, -55°C to 150°C.

Infineon Technologies BSC026N08NS5ATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSC026N08NS5ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C23A (Ta), 100A (Tc)
Power dissipation2.5W (Ta), 156W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.8V @ 115µA
Rds on (Max) @ id, vgs2.6mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs92 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6800 pF @ 40 V

Technical details

80 V, 2.6 mOhm — the conduction-loss floor

This puts it in the sweet spot for 48 V bus converters, 12 V to 24 V point-of-load stages, and synchronous rectification where conduction loss dominates the thermal budget.

Total gate charge is 92 nC at 10 V. The input capacitance Ciss is 6800 pF at 40 V Vds, which sets the driver's turn-on delay and the minimum dead-time for a half-bridge.

Housed in an 8-PowerTDFN (PG-TDSON-8-6) package, the part is surface-mount with an exposed drain pad. The datasheet specifies 2.5 W dissipation at 25 °C ambient (Ta) and 156 W at the case (Tc). The 100 A continuous drain rating is package-limited — the board copper area under the pad sets the real-world RthJA. Store the reels dry; the moisture sensitivity level is not stated here but a standard MSL bake before reflow is prudent for PowerTDFN packages.

BSC026N08NS5ATMA1
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