2.6 mΩ at 4.5 V — logic-level gate drive without the headroom tax
The BSC026N02KSG: The 2.6 mΩ maximum on-resistance at 4.5 V gate drive with 50 A is a logic-level threshold that lets a PWM signal from an MCU or gate driver turn the FET fully on without a secondary gate boost. The minimum drive voltage for the lowest Rds(on) is 2.5 V.
Infineon lists the BSC026N02KSG as Active in its product portfolio.
Package and thermal: PG-TDSON-8-1
Housed in an 8-lead PowerTDFN (Infineon's PG-TDSON-8-1), this is a surface-mount package with an exposed drain pad for heat sinking. The thermal resistance splits: 2.8 W maximum dissipation at ambient (Ta) but 78 W at the case (Tc), meaning the board's copper area and via stitching under the pad determine real-world current capability. The 134 A continuous drain rating at 25°C case temperature assumes a well-thermalized layout; at ambient with no heatsink the current is derated to 25 A.
Switching and drive numbers
Gate charge is 52.7 nC at 4.5 V, and input capacitance sits at 7800 pF at 10 V drain. The driver needs to source and sink enough peak current to switch the gate through the Miller plateau without excessive slew.