Infineon OptiMOS BSC025N03LSGATMA1, N-Channel MOSFET, 30V Vdss, 25A (Ta) / 100A (Tc), 2.5mOhm Rds(on) at 30A, 10V, PG-TDSON-8-5, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 25A (Ta), 100A (Tc) |
| Power dissipation | 2.5W (Ta), 83W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 2.5mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 74 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6100 pF @ 15 V |
Gate charge is 74 nC at 10 V. The ±20 V Vgs max gives margin if your gate drive rings on the turn-on edge.
Input capacitance is 6100 pF at 15 V.
No last-time-buy notice, no end-of-life window.
Maximum on-resistance is 2.5 mOhm at 30 A drain current with 10 V gate drive. That's the spec to use for worst-case conduction loss calculations.
Within the same OptiMOS 30 V family, the BSC028N03LS is a direct PG-TDSON-8-5 footprint match with a slightly higher 2.8 mOhm Rds(on). If you need lower on-resistance, the BSC022N03LS (2.2 mOhm) shares the same package and pinout. Both are active parts, so you can dual-source without a board spin.