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Infineon Technologies BSC022N04LSATMA1

BSC022N04LSATMA1 - Infineon Technologies

MPNBSC022N04LSATMA1
End of Life

MOSFET N-CH 40V 100A TDSON-8-6

$1.5Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC022N04LSATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation2.5W (Ta), 69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs2.2mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2600 pF @ 20 V