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Infineon Technologies BSC021N08NS5ATMA1
Infineon Technologies

Infineon BSC021N08NS5ATMA1 N-Channel MOSFET, 80 V, 2.1 mOhm

MPNBSC021N08NS5ATMA1
End of Life

Infineon OptiMOS™, StrongIRFET™ BSC021N08NS5ATMA1 N-Channel MOSFET, 80 V Vdss, 2.1 mOhm Rds(on) @ 50 A, 10 V, 100 A Id, 29 nC Qg, PG-TSON-8-3, -55°C to 175°C.

$3.93Ref. price · indicative, final on quote
BSC021N08NS5ATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC021N08NS5ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™, StrongIRFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation214W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureStandard
Case8-PowerTDFN
Vgs(th) (Max) @ id3.8V @ 146µA
Rds on (Max) @ id, vgs2.1mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8600 pF @ 40 V

Product details

80 V, 2.1 mOhm — what it means for the power stage

The Infineon BSC021N08NS5ATMA1 is an N-channel power MOSFET from the OptiMOS™ and StrongIRFET™ families, rated at 80 V drain-source voltage and 2.1 mOhm maximum on-resistance at 50 A with a 10 V gate drive.

Package and thermal: PG-TSON-8-3

The part comes in an 8-PowerTDFN package, supplier code PG-TSON-8-3, with a large exposed drain pad for heat sinking through the PCB.

Lifecycle and sourcing

The BSC021N08NS5ATMA1 carries an Active product status with ROHS3 compliance. There is no LTB window or EOL notice, so the part is safe to qualify into a new BOM.

Frequently asked questions

What is the Rds(on) of BSC021N08NS5ATMA1?

The maximum on-resistance is 2.1 mOhm at a drain current of 50 A with a 10 V gate drive. That is the figure to use for conduction-loss calculations in a high-current power stage.

What is the gate charge (Qg) of BSC021N08NS5ATMA1?

The maximum gate charge is 29 nC at a 10 V gate drive. This value determines the gate-driver's peak current requirement and the switching loss at a given frequency.

What package is BSC021N08NS5ATMA1?

The part is supplied in an 8-PowerTDFN package, designated PG-TSON-8-3 by Infineon. It is a surface-mount power package with an exposed drain pad for thermal management.