Infineon OptiMOS™, StrongIRFET™ BSC021N08NS5ATMA1 N-Channel MOSFET, 80 V Vdss, 2.1 mOhm Rds(on) @ 50 A, 10 V, 100 A Id, 29 nC Qg, PG-TSON-8-3, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™, StrongIRFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 214W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Standard |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.8V @ 146µA |
| Rds on (Max) @ id, vgs | 2.1mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8600 pF @ 40 V |
The Infineon BSC021N08NS5ATMA1 is an N-channel power MOSFET from the OptiMOS™ and StrongIRFET™ families, rated at 80 V drain-source voltage and 2.1 mOhm maximum on-resistance at 50 A with a 10 V gate drive.
The part comes in an 8-PowerTDFN package, supplier code PG-TSON-8-3, with a large exposed drain pad for heat sinking through the PCB.
There is no LTB window or EOL notice, so the part is safe to qualify into a new BOM.
The maximum on-resistance is 2.1 mOhm at a drain current of 50 A with a 10 V gate drive. That is the figure to use for conduction-loss calculations in a high-current power stage.
The maximum gate charge is 29 nC at a 10 V gate drive. This value determines the gate-driver's peak current requirement and the switching loss at a given frequency.
The part is supplied in an 8-PowerTDFN package, designated PG-TSON-8-3 by Infineon. It is a surface-mount power package with an exposed drain pad for thermal management.