OptiMOS 30 V N-channel — what the ratings mean for the switching node
The Infineon BSC020N03LSGATMA1 is an N-channel power MOSFET from the OptiMOS series, rated at 30 V drain-to-source and 2 mOhm maximum on-resistance at 10 V gate drive. Operating junction temperature spans -55 to 150 °C.
Gate drive and switching behaviour
The BSC020N03LSGATMA1 specifies a drive voltage range of 4.5 V to 10 V for achieving the rated Rds(on).
Thermal management and PCB layout
Maximum power dissipation is 2.5 W at ambient (Ta) and 96 W at the case (Tc).
Lifecycle and sourcing posture
No end-of-life notification or last-time-buy window is in effect.
