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Infineon Technologies BSC019N08NS5ATMA1
Infineon Technologies

Infineon BSC019N08NS5ATMA1 N-Channel MOSFET, 80V 237A

MPNBSC019N08NS5ATMA1
End of Life

Infineon OptiMOS™ 5 N-Channel MOSFET, 80V Vdss, 28A (Ta) / 237A (Tc) continuous drain, 1.9mOhm Rds(on) at 50A/10V, PG-TSON-8-3 package, -55°C to 175°C junction temperature.

$3.97Ref. price · indicative, final on quote
BSC019N08NS5ATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC019N08NS5ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™ 5
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C28A (Ta), 237A (Tc)
Power dissipation3W (Ta), 214W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.8V @ 146µA
Rds on (Max) @ id, vgs1.9mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs117 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8600 pF @ 40 V

Product details

80V N-channel in a PG-TSON-8-3 — what it delivers

The Infineon BSC019N08NS5ATMA1 is an N-channel power MOSFET from the OptiMOS™ 5 series, built for high-current switching in the 80V class. It carries a continuous drain current of 237A at the case (Tc) and 28A at ambient (Ta), with a maximum Rds(on) of 1.9 mOhm at 50A and 10V gate drive. The PG-TSON-8-3 footprint (8-PowerTDFN) keeps the board area tight for surface-mount power stages. Junction temperature spans -55°C to 175°C, which covers under-hood automotive, industrial motor drives, and power-supply secondary-side rectification.

Active production — no LTB risk

Infineon lists this part as Active (current production) and ROHS3 compliant. No end-of-life notices or last-time-buy schedules are on record.

PG-TSON-8-3 footprint and thermal management

The PG-TSON-8-3 package (also listed as 8-PowerTDFN) is a surface-mount power package with an exposed drain pad for thermal dissipation. Power dissipation is rated at 3W at ambient (Ta) and 214W at the case (Tc) — the wide spread reflects the difference between free-air convection and a properly heatsunk PCB layout. For designs running above 28A continuous, a thermal via array under the pad and adequate copper area on the top and bottom layers are assumed. Input capacitance (Ciss) is 8600 pF at 40V Vds, which sets the gate-drive current requirement for a given rise time.

Frequently asked questions

Is BSC019N08NS5ATMA1 RoHS compliant?

Yes — the part is ROHS3 compliant per Infineon's listing.

What is the difference between BSC019N08NS5ATMA1 and BSC019N08NS5AT?

The suffix 'ATMA1' indicates a specific tape-and-reel packaging variant (Tape & Reel) and possibly a different reel quantity or packing specification. The die, electrical ratings, and package (PG-TSON-8-3) are identical. For most designs, the two are interchangeable; the 'ATMA1' variant is the standard reeled option for automated assembly.

Is BSC019N08NS5ATMA1 a direct replacement for BSC020N08NS5?

The BSC019N08NS5ATMA1 has a lower Rds(on) (1.9 mOhm vs the BSC020N08NS5's typical 2.0 mOhm) and shares the same 80V Vdss, PG-TSON-8-3 package, and OptiMOS 5 technology. It is a direct drop-in replacement with slightly lower conduction loss — no board or layout changes needed.