BSC019N08NS5ATMA1

Infineon Technologies · OptiMOS™ 5 Series

Infineon OptiMOS™ 5 N-Channel MOSFET, 80V Vdss, 28A (Ta) / 237A (Tc) continuous drain, 1.9mOhm Rds(on) at 50A/10V, PG-TSON-8-3 package, -55°C to 175°C junction temperature.

Infineon Technologies BSC019N08NS5ATMA1
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[IN STOCK] In Stock: 5 pcs
$5.16/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSC019N08NS5ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™ 5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C28A (Ta), 237A (Tc)
Power dissipation3W (Ta), 214W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.8V @ 146µA
Rds on (Max) @ id, vgs1.9mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs117 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8600 pF @ 40 V

Technical details

80V N-channel in a PG-TSON-8-3 — what it delivers

It carries a continuous drain current of 237A at the case (Tc) and 28A at ambient (Ta), with a maximum Rds(on) of 1.9 mOhm at 50A and 10V gate drive. The PG-TSON-8-3 footprint (8-PowerTDFN) keeps the board area tight for surface-mount power stages.

Infineon lists this part as Active (current production) and ROHS3 compliant. No end-of-life notices or last-time-buy schedules are on record.

PG-TSON-8-3 footprint and thermal management

The PG-TSON-8-3 package (also listed as 8-PowerTDFN) is a surface-mount power package with an exposed drain pad for thermal dissipation. Power dissipation is rated at 3W at ambient (Ta) and 214W at the case (Tc) — the wide spread reflects the difference between free-air convection and a properly heatsunk PCB layout. Input capacitance (Ciss) is 8600 pF at 40V Vds, which sets the gate-drive current requirement for a given rise time.

BSC019N08NS5ATMA1
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