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Infineon Technologies BSC019N06NSATMA1

BSC019N06NSATMA1 N-Channel MOSFET, 60V, 100A, OptiMOS™

MPNBSC019N06NSATMA1
End of Life

Infineon OptiMOS™ BSC019N06NSATMA1, N-Channel MOSFET, 60 V drain-source, 100 A continuous drain, 1.95 mOhm max Rds(on) @ 50 A, 10 V, 77 nC gate charge, PG-TDSON-8 FL package, -55 to 175 °C junction temperature.

$2.52Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC019N06NSATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C100A (Ta)
Power dissipation136W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.3V @ 74µA
Rds on (Max) @ id, vgs1.95mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs77 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5250 pF @ 30 V

Product details

Gate charge and switching — 77 nC at 10 V

The BSC019N06NSATMA1: Total gate charge is 77 nC at 10 V, with an input capacitance of 5250 pF at 30 V drain-source. The drive voltage range is 6 V to 10 V.

Package and thermal — PG-TDSON-8 FL

The 136 W power dissipation figure assumes ideal heatsinking.

Temperature range — -55 to 175 °C junction

The 175 °C ceiling gives margin above the more common 150 °C limit, but the Rds(on) roughly doubles from 25 °C to 175 °C — factor that into the thermal budget at full load.

Frequently asked questions

Is BSC019N06NSATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.