BSC019N06NSATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ BSC019N06NSATMA1, N-Channel MOSFET, 60 V drain-source, 100 A continuous drain, 1.95 mOhm max Rds(on) @ 50 A, 10 V, 77 nC gate charge, PG-TDSON-8 FL package, -55 to 175 °C junction temperature.

Infineon Technologies BSC019N06NSATMA1
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[IN STOCK] In Stock: 5 pcs
$2.44/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSC019N06NSATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C100A (Ta)
Power dissipation136W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.3V @ 74µA
Rds on (Max) @ id, vgs1.95mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs77 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5250 pF @ 30 V

Technical details

BSC019N06NSATMA1
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