40 V N-channel in the OptiMOS™ line — what the ratings mean for the board
The Infineon BSC019N04LSATMA1 is an N-channel power MOSFET from the OptiMOS™ series, built for low-voltage synchronous rectification, DC-DC conversion, and load switching where conduction loss matters. Its headline figure is a maximum Rds(on) of 1.9 mOhm at 50 A and 10 V gate drive — that puts it in the sub-2 mOhm tier for a 40 V part, sized for high-current rails in telecom, server, and industrial power stages. Gate charge is 41 nC at 10 V — moderate for this current class.
Package and mounting — the thermal land pattern is part of the spec
The BSC019N04LSATMA1 is supplied in an 8-PowerTDFN case, Infineon's PG-TDSON-8-1 footprint. Mounting type is surface mount; the part ships in Tape & Reel or Cut Tape options, which covers both production reel feeding and prototype hand-place quantities.
Temperature grade and environment
The junction temperature range spans -55 °C to 150 °C.
Lifecycle and compliance
The BSC019N04LSATMA1 is listed as Active — no last-time-buy or end-of-life notice. It is ROHS3 compliant.
