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Infineon Technologies BSC018NE2LSATMA1

BSC018NE2LSATMA1 OptiMOS N-Ch MOSFET, 25 V, 1.8 mOhm

MPNBSC018NE2LSATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 25 V drain-source, 1.8 mOhm on-resistance at 30 A, 100 A continuous drain, PG-TDSON-8-1 package, -55 to 150 °C junction temperature.

$1.61Ref. price · indicative, final on quote
Infineon Technologies BSC018NE2LSATMA1 datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC018NE2LSATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C29A (Ta), 100A (Tc)
Power dissipation2.5W (Ta), 69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs1.8mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2800 pF @ 12 V

Product details

25 V, 1.8 mOhm N-channel — conduction loss floor for high-current rails

The BSC018NE2LSATMA1 is an Infineon OptiMOS N-channel MOSFET rated for 25 V drain-source and 1.8 mOhm max on-resistance at 30 A with 10 V gate drive.

Gate charge and switching — 39 nC at 10 V

Total gate charge is 39 nC at 10 V, with input capacitance 2800 pF at 12 V drain-source.

Package and temperature range — PG-TDSON-8-1, -55 to 150 °C

Supplied in a PG-TDSON-8-1 surface-mount package (8-PowerTDFN), the part handles junction temperatures from -55 °C to 150 °C. The 2 V threshold at 250 µA allows 4.5 V gate drive for low-voltage logic interfaces.

Frequently asked questions

What is the typical lead time for BSC018NE2LSATMA1?

Lead time is quoted per order based on current factory backlog and distributor inventory. Submit an RFQ with your quantity and required delivery window for a firm lead-time commitment.