1.6 mOhm at 50 A — the conduction-loss floor for a 60 V switch
The BSC016N06NSATMA1 N-Channel MOSFET has a 1.6 mOhm max Rds(on) at 50 A, 10 V, and a 139 W power dissipation rating at the case.
Gate charge and switching speed — 71 nC at 10 V
Total gate charge is 71 nC at 10 V, with an input capacitance of 5200 pF at 30 V drain-source. The drive voltage range of 6 V to 10 V allows use with standard 10 V or logic-level supplies.
Package and thermal path — PG-TDSON-8 FL
The thermal resistance from junction to case is specified at 1.08 °C/W (derived from 139 W at 150 °C max), so the board copper area and via count under the pad determine the real-world current capability. The 30 A rating at 25 °C ambient with no heatsink is the practical limit for a standard two-layer board; the 100 A rating at case temperature assumes a heatsink or forced air.