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Infineon Technologies BSC014NE2LSIATMA1
Infineon Technologies

Infineon BSC014NE2LSIATMA1 OptiMOS N-Ch MOSFET, 25V, 100A

MPNBSC014NE2LSIATMA1
End of Life

Infineon OptiMOS™ BSC014NE2LSIATMA1, N-Channel MOSFET, 25 V Vdss, 33 A (Ta) / 100 A (Tc) continuous drain, 1.4 mOhm Rds(on) at 10 V, PG-TDSON-8-7 package, -55°C to 150°C junction temperature.

$1.87Ref. price · indicative, final on quote
BSC014NE2LSIATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSC014NE2LSIATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C33A (Ta), 100A (Tc)
Power dissipation2.5W (Ta), 74W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs1.4mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2700 pF @ 12 V

Product details

Low Rds(on) for high-current switching

The Infineon BSC014NE2LSIATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS™ series, built on a metal-oxide semiconductor process. It is designed for low-voltage, high-current DC switching — think OR-ing diodes, load switches, synchronous rectification, and battery protection circuits in telecom, server, and automotive auxiliary rails. The headline figure is the 1.4 mOhm maximum on-resistance at a 10 V gate drive and 30 A drain current, which keeps conduction losses low enough that a 100 A continuous drain rating (case-limited) is practical in a compact PG-TDSON-8-7 footprint.

Gate drive and switching behaviour

Gate charge is 39 nC maximum at 10 V. Input capacitance is 2700 pF at 12 V drain-source.

Frequently asked questions

What is the Rds(on) of BSC014NE2LSIATMA1?

Maximum on-resistance is 1.4 mOhm at a 30 A drain current and 10 V gate drive. At 4.5 V drive the resistance increases; consult the typical output characteristic for the exact value at lower gate voltages.

What is the replacement or equivalent for BSC014NE2LSIATMA1?

No direct pin-compatible replacement or equivalent is listed in the manufacturer's cross-reference. The IPD50R950CEAUMA1 is a different device class (500 V CoolMOS™) and is not a functional substitute. For an alternative, search within the OptiMOS™ 25 V portfolio with similar Rds(on) and package.