BSC014N06NSTATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS series, BSC014N06NSTATMA1, N-Channel MOSFET, 60V Vdss, 100A Id, 1.45mOhm Rds(on) @ 50A 10V, 8-PowerTDFN, Surface Mount, -55°C to 175°C.

Infineon Technologies BSC014N06NSTATMA1
Download datasheet (PDF)
[IN STOCK] In Stock: 2 pcs
$4.76/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSC014N06NSTATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation3W (Ta), 188W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.3V @ 120µA
Rds on (Max) @ id, vgs1.45mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs104 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8125 pF @ 30 V

Technical details

At 1.45 mOhm max, this part sits at the low-Rds(on) end of the 60 V OptiMOS lineup. That comes with a 104 nC gate charge at 10 V.

Package and thermal: PowerTDFN layout notes

Lifecycle, compliance, and sourcing posture

The part is also available in Cut Tape (CT) for prototype quantities in addition to the standard Tape & Reel (TR) reel.

BSC014N06NSTATMA1
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