Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS N-Channel MOSFET, 40V Vdss, 33A (Ta) / 100A (Tc) Id, 1.4mOhm Rds(on) at 10V, PG-TDSON-8 FL surface-mount package.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Ta), 100A (Tc) |
| Power dissipation | 3W (Ta), 115W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 1.4mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 85 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6020 pF @ 20 V |
The BSC014N04LSTATMA1: Gate charge is 85 nC at Vgs of 10 V, with an input capacitance of 6020 pF at Vds of 20 V.
The maximum gate-to-source voltage is ±20 V.
For BOM-line qualification, the active status means no LTB risk and no forced redesign in the near term.
