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Infineon Technologies BSC014N04LSIATMA1
Infineon Technologies

Infineon BSC014N04LSIATMA1 OptiMOS N-Ch MOSFET, 40V 100A

MPNBSC014N04LSIATMA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, 40 V drain-to-source voltage, 31 A (Ta) / 100 A (Tc) continuous drain current, 1.45 mOhm max on-resistance at 10 V, PG-TDSON-8 FL package, -55°C to 150°C junction temperature.

$2.96Ref. price · indicative, final on quote
BSC014N04LSIATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC014N04LSIATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C31A (Ta), 100A (Tc)
Power dissipation2.5W (Ta), 96W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs1.45mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4000 pF @ 20 V

Product details

Package and mounting

The BSC014N04LSIATMA1: The 8-PowerTDFN package has an exposed drain pad underneath. That pad is the main thermal path — the datasheet calls for a soldered copper land on the PCB with thermal vias to inner layers. Rework is doable with hot air if you preheat the board from the back side to avoid lifting the pad. The package body is low-profile, which helps in dense layouts but means the solder joints under the part are hard to inspect visually — X-ray or a borescope is your friend for a production run.

Lifecycle and compliance

The BSC014N04LSIATMA1 carries an Active lifecycle status and is ROHS3 compliant. No last-time-buy or end-of-life notice is on record. For a BOM line, this means you can qualify it for new designs without worrying about an imminent forced migration. The ROHS3 compliance covers the full substance restriction list, so it passes the material declaration for most OEM environmental requirements.

Frequently asked questions

Is BSC014N04LSIATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.

What is the closest functional second-source for BSC014N04LSIATMA1?

The IPD50R950CEAUMA1 is a different-class part — a 500 V CoolMOS with 950 mOhm Rds(on) and 4.3 A current rating. It is not a functional substitute for this 40 V, 100 A OptiMOS. For a true second-source, look for another 40 V N-channel MOSFET in a similar PowerTDFN package with Rds(on) near 1.45 mOhm and gate charge around 55 nC.