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Infineon Technologies BSC012N06NSATMA1

Infineon Technologies BSC012N06NSATMA1

MPNBSC012N06NSATMA1
End of Life

MOSFET N-CH 60V 100A TSON-8

$3.86Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC012N06NSATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C36A (Ta), 306A (Tc)
Power dissipation214W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.3V @ 147µA
Rds on (Max) @ id, vgs1.2mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs143 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11000 pF @ 30 V