1 mOhm Rds(on) — the conduction-loss ceiling
The Infineon BSC010NE2LSATMA1 is an N-channel OptiMOS MOSFET rated for 25 V drain-to-source voltage. At 39 A continuous drain current (ambient-rated), the I²R loss stays under 1.5 W, which keeps the junction below the 150°C ceiling in a well-ventilated board layout.
Gate charge and switching budget
Total gate charge is 64 nC at 10 V. Input capacitance is 4700 pF at 12 V Vds.
PG-TDSON-8-7 — the thermal joint
The 8-PowerTDFN package (supplier code PG-TDSON-8-7) has an exposed drain pad on the bottom. For a 100 A continuous load the board copper area under the tab sets the real thermal resistance; a 2 oz copper pour of at least 1 in² per side is the starting point.
Active — no lifecycle risk
It is ROHS3 compliant. No official second-source cross-reference is listed.
