Infineon OptiMOS™ BSC010N04LSATMA1, N-channel MOSFET, 40 V drain-source, 1 mOhm Rds(on) at 10 V, 100 A continuous drain current, PG-TDSON-8 FL surface-mount package.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 38A (Ta), 100A (Tc) |
| Power dissipation | 2.5W (Ta), 139W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 1mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 95 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6800 pF @ 20 V |
The Infineon BSC010N04LSATMA1 is an N-channel MOSFET from the OptiMOS™ series, rated for 40 V drain-to-source and a continuous drain current of 100 A at the case (38 A at ambient).
The BSC010N04LSATMA1 is listed as Active in production. The ROHS3 compliance is confirmed.
The Rds(on) is 1 mOhm at 25 °C and 10 V drive. At a 125 °C junction temperature, expect the on-resistance to approximately double — budget derating for the load current accordingly.
The BSC010N04LSATMA1 specifies drive voltages of 4.5 V and 10 V for achieving the rated Rds(on). For the lowest on-resistance, use 10 V gate drive.