Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS N-Channel MOSFET, 40 V drain-source, 100 A continuous drain (case), 1 mOhm max Rds(on) at 10 V gate drive, PG-TDSON-8-6 package, -55 to 175 °C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Ta), 100A (Tc) |
| Power dissipation | 3W (Ta), 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.3V @ 250µA |
| Rds on (Max) @ id, vgs | 1mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 67 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 4600 pF @ 20 V |
The BSC010N04LS6ATMA1: Housed in the PG-TDSON-8-6 package — an 8-pin PowerTDFN with a large exposed pad for thermal transfer to the PCB. Surface-mount only; no through-hole option.
No last-time-buy or end-of-life notice. For a BOM freeze, this part is stable — no imminent PCN risk from the manufacturer. The ROHS3 status covers the full substance restriction list, so it passes EU and China RoHS requirements without an exemption.
