Infineon OptiMOS N-Channel MOSFET, 40 V drain-source, 100 A continuous drain (case), 1 mOhm max Rds(on) at 10 V gate drive, PG-TDSON-8-6 package, -55 to 175 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Ta), 100A (Tc) |
| Power dissipation | 3W (Ta), 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.3V @ 250µA |
| Rds on (Max) @ id, vgs | 1mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 67 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 4600 pF @ 20 V |
The BSC010N04LS6ATMA1: Housed in the PG-TDSON-8-6 package — an 8-pin PowerTDFN with a large exposed pad for thermal transfer to the PCB. Surface-mount only; no through-hole option.
No last-time-buy or end-of-life notice. For a BOM freeze, this part is stable — no imminent PCN risk from the manufacturer. The ROHS3 status covers the full substance restriction list, so it passes EU and China RoHS requirements without an exemption.
Yes. The maximum Rds(on) of 1 mOhm is specified at a 10 V gate drive, and the drive voltage range for achieving minimum Rds(on) is 4.5 V to 10 V. The gate charge is 67 nC at 4.5 V, so a 5 V or 10 V gate driver will work.
Yes, it is ROHS3 Compliant, which means it meets the lead-free and restricted-substance requirements of the EU RoHS directive.